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1

Efficient computations of ℓ[subscript 1] and ℓ[subscript ∞] rearrangement distances

by Amir, Amihood, Aumann, Yonatan, Indyk, Piotr, Levy, Avivit, Porat, Ely
Published 2014

“... operations, each with an associated cost. The natural ℓ[subscript 1] and ℓ[subscript 2] rearrangement systems...”
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2

Indirect L to T point optical transition in bismuth nanowires

by Levin, A. J., Black, M. R., Dresselhaus, Mildred
Published 2010

“...An indirect electronic transition from the L point valence band to the T point valence band has...”
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3

Weighted ℓ₁ -Minimization for Generalized Non-Uniform Sparse Model

by Misra, Sidhant, Parrilo, Pablo A
Published 2017

“... recovery performance. In particular, weighted ℓ₁-minimization with suitable choice of weights has been...”
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4

Reply to "Comment on 'Indirect L to T point optical transition in bismuth nanowires' "

by Dresselhaus, Mildred, Levin, A. J., Black, M. R., Reppert, J., Rao, A. M.
Published 2010

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5

Almost-Euclidean Subspaces of ℓ1N via Tensor Products: A Simple Approach to Randomness Reduction

by Indyk, Piotr, Szarek, Stanislaw
Published 2012

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6

Edge-modulated perpendicular magnetic anisotropy in [Co/Pd][subscript n] and L1[subscript 0]-FePt thin film wires

by Zhang, Jinshuo, Ho, Pin, Baldo, Marc A., Ross, Caroline A., Currivan-Incorvia, Jean A., Siddiqui, Saima Afroz
Published 2016

“.../Pd][subscript 20] multilayers or L1[subscript 0]-FePt films using liftoff with a double-layer resist...”
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7

L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor...

by Kim, D.-H., Li, J., Kuo, J.-M., Pinsukanjana, P., Kao, Y.-C., Chen, P., Papavasiliou, A., King, C., Regan, E., Urteaga, M., Brar, B., Kim, T.-W., del Alamo, Jesus A., Antoniadis, Dimitri A.
Published 2014

“...-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An L[subscript g] = 60 nm...”
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